Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
U-MOSIX-H |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
150A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
0.79mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id |
3V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6650 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta), 170W (Tc) |
Operating Temperature |
175°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SOP Advance (5x5) |
Package / Case |
8-PowerVDFN |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
85 nC @ 10 V |
Grade |
Automotive |
Qualification |
AEC-Q101 |