Category |
Discrete Semiconductor Products - Transistors - IGBTs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tube |
RoHS Status |
|
IGBT Type |
- |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
10 A |
Current - Collector Pulsed (Icm) |
20 A |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
Power - Max |
60 W |
Switching Energy |
- |
Input Type |
Standard |
Gate Charge |
- |
Td (on/off) @ 25°C |
400ns/400ns |
Test Condition |
300V, 10A, 100Ohm, 15V |
Operating Temperature |
150°C (TJ) |
Grade |
- |
Qualification |
- |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
Supplier Device Package |
- |
Reverse Recovery Time (trr) |
200 ns |
Base Product Number |
GT10J312 |