| Category |
Discrete Semiconductor Products - Transistors - IGBTs |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tube |
| RoHS Status |
|
| IGBT Type |
- |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
10 A |
| Current - Collector Pulsed (Icm) |
20 A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Power - Max |
60 W |
| Switching Energy |
- |
| Input Type |
Standard |
| Gate Charge |
- |
| Td (on/off) @ 25°C |
400ns/400ns |
| Test Condition |
300V, 10A, 100Ohm, 15V |
| Operating Temperature |
150°C (TJ) |
| Grade |
- |
| Qualification |
- |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package |
- |
| Reverse Recovery Time (trr) |
200 ns |
| Base Product Number |
GT10J312 |