Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
U-MOSIII |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.2V, 4.5V |
Rds On (Max) @ Id, Vgs |
1.1Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 100µA |
Vgs (Max) |
±10V |
Input Capacitance (Ciss) (Max) @ Vds |
36 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
CST3C |
Package / Case |
SC-101, SOT-883 |
Base Product Number |
SSM3K35 |
Gate Charge (Qg) (Max) @ Vgs |
0.34 nC @ 4.5 V |
Grade |
- |
Qualification |
- |